IAUC100N04S6L020ATMA1 vs IAUC60N04S6N044ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L020ATMA1 by Infineon and IAUC60N04S6N044ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΞ© OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 β ActiveInfineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6L020ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.98 |
| FET Type | N-Channel | β |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V | β |
| Continuous Drain Current (Tc) | 100 A | β |
| Power Dissipation (Tc) | 75 W | β |
| RDS(on) Maximum @ VGS=10V, ID=50A | 2.04 mΞ© | β |
| RDS(on) Typical | 2.0 mΞ© | β |
| Gate-Source Voltage VGS (max) | Β±20 V | β |
| Gate Threshold Voltage VGS(th) Typical | 2.0 V | β |
| Technology | OptiMOS 6 | OptiMOS-6 N-channel trench MOSFET |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| Package | PG-TDSON-8 (SS08, 5x6 mm leadless) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive grade | β |
| Packaging | Tape & Reel (TMA1) | β |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25Β°C | β | 60 A |
| Continuous Drain Current (I_D) at Tc=100Β°C | β | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | β | 4.4 mΞ© |
| On-Resistance R_DS(on) max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25Β°C | β | 42 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| MSL Level | β | 1 (unlimited) |
| Automotive Qualification | β | AEC-Q101 qualified (IAUC prefix) |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen-free status] |