IAUC100N04S6L020ATMA1 vs IAUT300N10S5N015ATMA1 Comparison

Detailed side-by-side comparison of IAUC100N04S6L020ATMA1 by Infineon and IAUT300N10S5N015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N04S6L020ATMA1

IAUC100N04S6L020ATMA1 - 40V 100A 2mΞ© OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 βœ“ Active
Infineon
IAUT300N10S5N015ATMA1

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N04S6L020ATMA1 IAUT300N10S5N015ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $4.10
FET Type N-Channel β€”
Drain-Source Breakdown Voltage V(BR)DSS 40 V β€”
Continuous Drain Current (Tc) 100 A β€”
Power Dissipation (Tc) 75 W β€”
RDS(on) Maximum @ VGS=10V, ID=50A 2.04 mΞ© β€”
RDS(on) Typical 2.0 mΞ© β€”
Gate-Source Voltage VGS (max) Β±20 V β€”
Gate Threshold Voltage VGS(th) Typical 2.0 V β€”
Technology OptiMOS 6 OptiMOS 5 N-Channel Power MOSFET
Operating Temperature Range -55 Β°C to +175 Β°C (TJ) -55Β°C to +175Β°C
Package PG-TDSON-8 (SS08, 5x6 mm leadless) PG-HSOF-8-1 (HSOF-8)
Mounting Type Surface Mount Surface Mount
Qualification Automotive grade β€”
Packaging Tape & Reel (TMA1) β€”
RoHS Status Compliant β€”
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, Tc) β€” 300 A
Power Dissipation (PD, Tc) β€” 375 W
RDS(on) (typ, VGS=10V) β€” 1.5 mΞ©
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage (VGS(th), typ) β€” [DATA_NEEDED: VGS(th) value]
Automotive Qualification β€” AEC-Q101 qualified
MSL Level β€” MSL1 (260Β°C peak reflow)
RoHS Compliance β€” RoHS compliant (Green product)
Avalanche Tested β€” 100% avalanche tested
Polarity β€” N-Channel
Mode of Operation β€” Enhancement-mode

Datasheets & Resources

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