IAUC100N04S6L025ATMA1 vs BSC076N06NS3GATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L025ATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L025ATMA1
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β ActiveInfineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6L025ATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.65 |
| Technology | OptiMOS 6 40V trench MOSFET | N-Channel Trench MOSFET |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | 50 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | β |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25C | 62 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 3 |
| On-Resistance RDS(on) max at VGS=10V | β | 7.6 mΞ© |
| On-Resistance RDS(on) max at VGS=4.5V | β | 10.4 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | 2.0 V to 3.5 V |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 69 W |
| Operating Temperature Range | β | -55C to +150C |
| RoHS Compliance | β | Compliant |
| Halogen-Free | β | Yes (per Infineon product page) |