IAUC100N04S6L025ATMA1 vs IAUC100N10S5N040ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L025ATMA1 by Infineon and IAUC100N10S5N040ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β ActiveInfineon
IAUC100N10S5N040ATMA1 - 100V 4mΞ© 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6L025ATMA1 | IAUC100N10S5N040ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $1.62 |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOS-5 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | 400 A |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25C | 62 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (up to 260C peak reflow) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| FET Type | β | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) @ TC=25C | β | 100 A (package-limited) |
| RDS(on) max @ VGS=10V | β | 4 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Maximum Power Dissipation (PD) | β | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | β | 0.9 K/W |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Avalanche Rating | β | 100% Avalanche tested |
| AOI Compatibility | β | Feasible for Automatic Optical Inspection |