IAUC100N04S6L025ATMA1 vs IAUC120N06S5L011ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L025ATMA1 by Infineon and IAUC120N06S5L011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β ActiveInfineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6L025ATMA1 | IAUC120N06S5L011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $2.10 |
| Technology | OptiMOS 6 40V trench MOSFET | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | β |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Power Dissipation (PD) at TC=25C | 62 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-53 (TDSON-8 FL, 5 mm Γ 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 60 V (S5 generation) |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 60 V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) | β | 310 A (Tj), 120 A marketing |
| R_DS(on) max | β | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] |
| Power Dissipation (P_D) | β | 188 W at T_C = 25 Β°C |
| Avalanche Energy Rated | β | Yes (EAS) |