IAUC100N04S6L025ATMA1 vs IAUCN10S7N021ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L025ATMA1 by Infineon and IAUCN10S7N021ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β ActiveInfineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6L025ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $2.05 |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOSβ’ 7 (trench MOSFET) |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | [DATA_NEEDED: pulsed drain current IDM] |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Power Dissipation (PD) at TC=25C | 62 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc | β | 175 A |
| RDS(on) max @ VGS=10 V | β | 2.1 mΞ© |
| Gate-Source Threshold (VGS(th)) typ | β | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | β | 105 nC |
| Input Capacitance (Ciss) | β | 2.98 nF |
| Output Capacitance (Coss) | β | 32 pF |
| Reverse Transfer Capacitance (Crss) | β | 7.153 nF |
| Power Dissipation (Pd) @ Tc | β | 217 W |
| Qualification | β | AEC-Q101 (Automotive) |