IAUC100N04S6N015ATMA1 vs IAUC100N04S6N028ATMA1 Comparison

Detailed side-by-side comparison of IAUC100N04S6N015ATMA1 by Infineon and IAUC100N04S6N028ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N04S6N015ATMA1

IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6N015ATMA1 βœ“ Active
Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N04S6N015ATMA1 IAUC100N04S6N028ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.42
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-6 40V β€”
Technology N-Channel Trench MOSFET MOSFET (Metal Oxide)
Drain-Source Voltage (V_DS) 40 V 40 V
Continuous Drain Current (I_D @ T_C=25C) 100 A β€”
Power Dissipation (P_D @ T_C=25C) 100 W β€”
R_DS(on) max @ V_GS=10V 1.5 mΞ© (typical, per Infineon product page) 2.8 mΞ© (typical)
Gate-Source Voltage (V_GS) max Β±20 V β€”
Operating Temperature Range -55 C to +175 C (junction, typical) -55 Β°C to +175 Β°C
Package PG-TDSON-8 (SSO8) 5x6 mm PG-TDSON-8 (TDSON-8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited floor life) β€”
Automotive Qualification AEC-Q101 β€”
RoHS Compliance Compliant β€”
Lead-Free Yes β€”
Series β€” OptiMOS 6 40V
FET Type β€” N-Channel
Continuous Drain Current (I_D) at T_C=25Β°C β€” 100 A
Pulsed Drain Current (I_DM) β€” 400 A
Gate Threshold Voltage (V_GS(th)) β€” 1.5 V to 2.5 V
Total Gate Charge (Q_g) β€” [DATA_NEEDED: Q_g in nC]
Power Dissipation (P_D) at T_C=25Β°C β€” 62 W
Automotive Qualified β€” Yes
RoHS Status β€” Compliant

Datasheets & Resources

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