IAUC100N04S6N015ATMA1 vs IAUCN04S7N006ATMA1 Comparison

Detailed side-by-side comparison of IAUC100N04S6N015ATMA1 by Infineon and IAUCN04S7N006ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N04S6N015ATMA1

IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6N015ATMA1 βœ“ Active
Infineon
IAUCN04S7N006ATMA1

IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon

IAUCN04S7N006ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N04S6N015ATMA1 IAUCN04S7N006ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.95
Manufacturer Infineon Technologies β€”
Product Family OptiMOS-6 40V β€”
Technology N-Channel Trench MOSFET OptiMOS 5 (trench)
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current (I_D @ T_C=25C) 100 A β€”
Power Dissipation (P_D @ T_C=25C) 100 W β€”
R_DS(on) max @ V_GS=10V 1.5 mΞ© (typical, per Infineon product page) β€”
Gate-Source Voltage (V_GS) max Β±20 V β€”
Operating Temperature Range -55 C to +175 C (junction, typical) -55 C to +175 C
Package PG-TDSON-8 (SSO8) 5x6 mm PG-TDSON-8-43
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited floor life) [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q101 AEC-Q101
RoHS Compliance Compliant β€”
Lead-Free Yes β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) β€” 175 A
On-State Resistance (RDS(on)) β€” 0.63 mOhm (typ at VGS = 10 V)
Gate-Source Voltage (VGS) Max β€” [DATA_NEEDED: VGS max rating]
Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Junction Temperature Max β€” 175 C
Power Dissipation Max (Pd) β€” [DATA_NEEDED: Pd max]
Gate Charge Total (Qg) β€” [DATA_NEEDED: Qg total]
Lead-Free / RoHS β€” Yes (compliant)

Datasheets & Resources

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