IAUC100N04S6N015ATMA1 vs IPLU300N04S41R1XTMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6N015ATMA1 by Infineon and IPLU300N04S41R1XTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6N015ATMA1
IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6N015ATMA1 β ActiveInfineon
IPLU300N04S41R1XTMA1
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΞ© Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6N015ATMA1 | IPLU300N04S41R1XTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $3.45 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | β |
| Technology | N-Channel Trench MOSFET | OptiMOS (Trench MOSFET) |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D @ T_C=25C) | 100 A | β |
| Power Dissipation (P_D @ T_C=25C) | 100 W | β |
| R_DS(on) max @ V_GS=10V | 1.5 mΞ© (typical, per Infineon product page) | β |
| Gate-Source Voltage (V_GS) max | Β±20 V | β |
| Operating Temperature Range | -55 C to +175 C (junction, typical) | β |
| Package | PG-TDSON-8 (SSO8) 5x6 mm | PG-HSOF-8-1 (8-PowerSFN, surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited floor life) | β |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Compliance | Compliant | Yes (Green Product) |
| Lead-Free | Yes | Yes (100% lead-free) |
| Part Number | β | IPLU300N04S41R1XTMA1 |
| FET Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 300 A |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 300 W |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | β | 1.15 mΞ© |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | β | 151 nC |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | β | 12,090 pF |
| Gate-Source Voltage (V<sub>GS</sub>) | β | Β±20 V |
| Operating Junction Temperature | β | 175 Β°C |
| Peak Reflow Temperature (AEC-Q) | β | 260 Β°C |
| Avalanche Rating | β | 100% Avalanche Tested |
| Configuration | β | Single with built-in diode |
| Packing | β | Tape & Reel (TR) |