IAUC100N04S6N028ATMA1 vs IAUC50N08S5L096ATMA1 Comparison

Detailed side-by-side comparison of IAUC100N04S6N028ATMA1 by Infineon and IAUC50N08S5L096ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 βœ“ Active
Infineon
IAUC50N08S5L096ATMA1

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N04S6N028ATMA1 IAUC50N08S5L096ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.98
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 40V β€”
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) β€”
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current (I_D) at T_C=25Β°C 100 A β€”
Pulsed Drain Current (I_DM) 400 A β€”
R_DS(on) max @ V_GS=10V 2.8 mΞ© (typical) β€”
Gate Threshold Voltage (V_GS(th)) 1.5 V to 2.5 V β€”
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g in nC] β€”
Power Dissipation (P_D) at T_C=25Β°C 62 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C -55Β°C to +175Β°C
Package PG-TDSON-8 (TDSON-8) PG-TDSON-8-33 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Automotive Qualified Yes β€”
RoHS Status Compliant Compliant
Product Series β€” OptiMOS 5
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) β€” 50 A (Tc)
Pulsed Drain Current (IDM) β€” 200 A
On-Resistance (RDS(on)) β€” 9.6 mΞ© max @ VGS=10V, ID=25A
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) β€” 60 W (Tc)
Automotive Qualification β€” AEC-Q101
Lead-Free β€” Yes
MSL Level β€” [DATA_NEEDED: MSL level]

Datasheets & Resources

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