IAUC100N04S6N028ATMA1 vs IAUCN10S7L290TATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6N028ATMA1 by Infineon and IAUCN10S7L290TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 β ActiveInfineon
IAUCN10S7L290TATMA1
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6N028ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 40V | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D) at T_C=25Β°C | 100 A | β |
| Pulsed Drain Current (I_DM) | 400 A | β |
| R_DS(on) max @ V_GS=10V | 2.8 mΞ© (typical) | β |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V | β |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g in nC] | β |
| Power Dissipation (P_D) at T_C=25Β°C | 62 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8 (TDSON-8) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | β |
| RoHS Status | Compliant | β |
| Product Family | β | OptiMOSβ’ 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25Β°C | β | 27 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | β | 28.6 mΞ© |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25Β°C | β | 45 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q100 qualified |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | β | Compliant |
| Lead-Free | β | Yes |
| Avalanche Rated | β | Yes |
| ESD Protection | β | HBM Class 1C (per Infineon datasheet) |