IAUC100N08S5N043ATMA1 vs IAUC100N04S6N015ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N08S5N043ATMA1 by Infineon and IAUC100N04S6N015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 β ActiveInfineon
IAUC100N04S6N015ATMA1
IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6N015ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N08S5N043ATMA1 | IAUC100N04S6N015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.72 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | IAUC / OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET (Enhancement Mode) | β |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 100 A (package limited) | β |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25Β°C, R<sub>thJC</sub>=1.2 K/W | β |
| Maximum R<sub>DS(on)</sub> | 4.3 mΞ© | β |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55 C to +175 C (junction, typical) |
| Package | PG-TDSON-8-34 (SuperSO8) | PG-TDSON-8 (SSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Moisture Sensitivity Level (MSL) | MSL1 (up to 260Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS / REACH | RoHS Compliant (Green Product) | β |
| Technology | OptiMOS 5 (Trench) | N-Channel Trench MOSFET |
| Channel Mode | Enhancement | β |
| Product Family | β | OptiMOS-6 40V |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D @ T_C=25C) | β | 100 A |
| Power Dissipation (P_D @ T_C=25C) | β | 100 W |
| R_DS(on) max @ V_GS=10V | β | 1.5 mΞ© (typical, per Infineon product page) |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| MSL Level | β | 1 (unlimited floor life) |
| RoHS Compliance | β | Compliant |
| Lead-Free | β | Yes |