IAUC100N08S5N043ATMA1 vs IAUC50N08S5L096ATMA1 Comparison

Detailed side-by-side comparison of IAUC100N08S5N043ATMA1 by Infineon and IAUC50N08S5L096ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 βœ“ Active
Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N08S5N043ATMA1 IAUC50N08S5L096ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.72 $0.98
Manufacturer Infineon Technologies Infineon Technologies
Part Series IAUC / OptiMOS 5 β€”
Transistor Type N-Channel MOSFET (Enhancement Mode) β€”
Maximum Drain-Source Voltage (V<sub>DS</sub>) 80 V β€”
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) 100 A (package limited) β€”
Continuous Drain Current (chip-limited) 120 A at T<sub>C</sub>=25Β°C, R<sub>thJC</sub>=1.2 K/W β€”
Maximum R<sub>DS(on)</sub> 4.3 mΞ© β€”
Maximum Power Dissipation (P<sub>D</sub>) 125 W (T<sub>C</sub>) β€”
Operating Temperature Range -55Β°C to +175Β°C -55Β°C to +175Β°C
Package PG-TDSON-8-34 (SuperSO8) PG-TDSON-8-33 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Moisture Sensitivity Level (MSL) MSL1 (up to 260Β°C peak reflow) β€”
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Rating 100% Avalanche Tested β€”
RoHS / REACH RoHS Compliant (Green Product) β€”
Technology OptiMOS 5 (Trench) β€”
Channel Mode Enhancement β€”
Product Series β€” OptiMOS 5
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) β€” 50 A (Tc)
Pulsed Drain Current (IDM) β€” 200 A
On-Resistance (RDS(on)) β€” 9.6 mΞ© max @ VGS=10V, ID=25A
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) β€” 60 W (Tc)
RoHS Status β€” Compliant
Lead-Free β€” Yes
MSL Level β€” [DATA_NEEDED: MSL level]

Datasheets & Resources

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