IAUC100N10S5N040ATMA1 vs BSC117N08NS5ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N10S5N040ATMA1 by Infineon and BSC117N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N10S5N040ATMA1
IAUC100N10S5N040ATMA1 - 100V 4mΞ© 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 β ActiveInfineon
BSC117N08NS5ATMA1
BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
BSC117N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N10S5N040ATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.46 |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS-5 | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | β |
| Pulsed Drain Current (IDM) | 400 A | β |
| RDS(on) max @ VGS=10V | 4 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg value] |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | β |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | β |
| Operating Temperature Range | -55C to +175C (junction) | -55 C to +150 C (typical MOSFET junction) |
| Package | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260C peak reflow) | 1 |
| Automotive Qualification | AEC-Q100 qualified | β |
| Avalanche Rating | 100% Avalanche tested | β |
| AOI Compatibility | Feasible for Automatic Optical Inspection | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC117N08NS5ATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Continuous Drain Current (ID) max | β | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | β | 11.7 mOhm |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 50 W |
| Pin Count | β | 8 |
| Lead-Free | β | Yes |