IAUC100N10S5N040ATMA1 vs IAUC100N10S5L040ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N10S5N040ATMA1 by Infineon and IAUC100N10S5L040ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N10S5N040ATMA1
IAUC100N10S5N040ATMA1 - 100V 4mΞ© 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 β ActiveInfineon
IAUC100N10S5L040ATMA1
IAUC100N10S5L040ATMA1 - 100V 4mΞ© 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N10S5N040ATMA1 | IAUC100N10S5L040ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.94 |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS-5 | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | β |
| Pulsed Drain Current (IDM) | 400 A | 400 A |
| RDS(on) max @ VGS=10V | 4 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | β |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | β |
| Operating Temperature Range | -55C to +175C (junction) | -55 C to +175 C (junction) |
| Package | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-34 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260C peak reflow) | β |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche tested | β |
| AOI Compatibility | Feasible for Automatic Optical Inspection | Feasible for automatic optical inspection |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOST 5 Power-Transistor (IAUC) |
| Transistor Type | β | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| On-State Resistance RDS(on) max | β | 4 mOhm |
| Gate Threshold Voltage VGS(th) | β | Logic Level |
| Continuous Power Dissipation (Tc) | β | 167 W |
| MSL Moisture Sensitivity | β | MSL1 (up to 260 C peak reflow) |
| Avalanche Tested | β | 100% production avalanche tested |