IAUC100N10S5N040ATMA1 vs IAUC120N06S5L011ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N10S5N040ATMA1 by Infineon and IAUC120N06S5L011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N10S5N040ATMA1
IAUC100N10S5N040ATMA1 - 100V 4mΞ© 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 β ActiveInfineon
IAUC120N06S5L011ATMA1
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N10S5N040ATMA1 | IAUC120N06S5L011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $2.10 |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS-5 | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | β |
| Pulsed Drain Current (IDM) | 400 A | β |
| RDS(on) max @ VGS=10V | 4 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | β |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-53 (TDSON-8 FL, 5 mm Γ 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche tested | β |
| AOI Compatibility | Feasible for Automatic Optical Inspection | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 60 V (S5 generation) |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 60 V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) | β | 310 A (Tj), 120 A marketing |
| R_DS(on) max | β | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] |
| Power Dissipation (P_D) | β | 188 W at T_C = 25 Β°C |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Avalanche Energy Rated | β | Yes (EAS) |