IAUC100N10S5N040ATMA1 vs IAUC60N04S6N031HATMA1 Comparison
Detailed side-by-side comparison of IAUC100N10S5N040ATMA1 by Infineon and IAUC60N04S6N031HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N10S5N040ATMA1
IAUC100N10S5N040ATMA1 - 100V 4mΞ© 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 β ActiveInfineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N10S5N040ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.95 |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS-5 | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | β |
| Pulsed Drain Current (IDM) | 400 A | β |
| RDS(on) max @ VGS=10V | 4 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | β |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | β |
| Operating Temperature Range | -55C to +175C (junction) | -55 Β°C to +175 Β°C (Tj) |
| Package | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-56 (5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260C peak reflow) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 |
| Avalanche Rating | 100% Avalanche tested | β |
| AOI Compatibility | Feasible for Automatic Optical Inspection | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | IAUC (Integrated Automotive Half-Bridge) |
| Process Technology | β | OptiMOS 6 40V |
| Configuration | β | Half-Bridge (2 N-Channel MOSFETs) |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, Tj) | β | 60 A |
| Power Dissipation (P_D, Tc=25C) | β | 75 W |
| R_DS(on) at VGS=10V | β | 3.1 mΞ© |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Pin Count | β | 8 |