IAUC100N10S5N040ATMA1 vs IAUCN04S7N012ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N10S5N040ATMA1 by Infineon and IAUCN04S7N012ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N10S5N040ATMA1
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUC100N10S5N040ATMA1 | IAUCN04S7N012ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.18 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | OptiMOS-7 (trench) |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg typical] |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Operating Temperature Range | -55C to +175C (junction) | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] |
| Package | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-34 (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260C peak reflow) | 1 |
| Automotive Qualification | AEC-Q100 qualified | — |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| RoHS Status | Compliant | Compliant |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 1.2 mΩ |
| On-State Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max] |
| Transistor Grade | — | Automotive (AEC-Q101) |
| Power Dissipation (Ptot) | — | [DATA_NEEDED: Ptot at TC=25°C] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: RθJA on JEDEC PCB] |
| Halogen-Free | — | Yes |
| Polarity | — | N-Channel |