IAUC100N10S5N040ATMA1 vs IAUT300N08S5N012ATMA2 Comparison
Detailed side-by-side comparison of IAUC100N10S5N040ATMA1 by Infineon and IAUT300N08S5N012ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΞ© 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 β ActiveInfineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΞ© N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 β ActiveSpecification Comparison
| Parameter | IAUC100N10S5N040ATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $2.20 |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS-5 | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | β |
| Pulsed Drain Current (IDM) | 400 A | 1200 A (per datasheet, typical) |
| RDS(on) max @ VGS=10V | 4 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | β |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | β |
| Operating Temperature Range | -55C to +175C (junction) | -55 Β°C to +175 Β°C (TJ) |
| Package | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260C peak reflow) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche tested | β |
| AOI Compatibility | Feasible for Automatic Optical Inspection | β |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOSβ’-5 80 V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 300 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.2 mΞ© |
| Maximum Power Dissipation (PD, Tc) | β | 375 W |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| RoHS Compliance | β | Compliant |