IAUC100N10S5N040ATMA1 vs IRLR3410TRLPBF Comparison
Detailed side-by-side comparison of IAUC100N10S5N040ATMA1 by Infineon and IRLR3410TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N10S5N040ATMA1
IAUC100N10S5N040ATMA1 - 100V 4mΞ© 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 β Active
Specification Comparison
| Parameter | IAUC100N10S5N040ATMA1 | IRLR3410TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.65 |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS-5 | HEXFET (5th generation) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | β |
| Pulsed Drain Current (IDM) | 400 A | 60 A |
| RDS(on) max @ VGS=10V | 4 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | 22.7 nC |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | β |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount (tape and reel) |
| MSL Level | MSL1 (up to 260C peak reflow) | 1 |
| Automotive Qualification | AEC-Q100 qualified | β |
| Avalanche Rating | 100% Avalanche tested | β |
| AOI Compatibility | Feasible for Automatic Optical Inspection | β |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRLR3410TRLPBF |
| Continuous Drain Current (ID) at TC=25C | β | 17 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 105 mOhm |
| On-Resistance RDS(on) max @ VGS=5V | β | [DATA_NEEDED: RDS(on) @ VGS=5V] |
| Gate-Source Threshold VGS(th) typ | β | 2.0 V |
| Gate Drive Level | β | Logic level (5V capable) |
| Power Dissipation (PD) at TC=25C | β | 79 W |
| Operating Junction Temperature | β | -55C to +175C |
| RoHS Compliance | β | Compliant (Pb-free) |
| Avalanche Rated | β | Yes (UIS tested) |