IAUC120N04S6L012ATMA1 vs IAUC28N08S5L230ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6L012ATMA1 by Infineon and IAUC28N08S5L230ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6L012ATMA1
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 β ActiveInfineon
IAUC28N08S5L230ATMA1
IAUC28N08S5L230ATMA1 - 80V 28A 23mΞ© OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6L012ATMA1 | IAUC28N08S5L230ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC | 120 A | β |
| Pulsed Drain Current (IDM) | 480 A | β |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΞ© (typ) | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | β |
| Power Dissipation (PD) at TC | 115 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | β |
| Package | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TDSON-8-33 (5x6 mm SSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Delivery Form | Tape & Reel | β |
| Series | β | OptiMOS-5 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | β | 28 A |
| Pulsed Drain Current (I<sub>DM</sub>) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | β | 23 mΞ© (typ) |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | β | 2.5 V |
| Gate Charge (Q<sub>g</sub>, typ) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | β | 38 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Technology | β | OptiMOS-5 Power MOSFET |
| Automotive Qualified | β | Yes (AEC-Q101) |