IAUC120N04S6L012ATMA1 vs IAUC60N04S6N031HATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6L012ATMA1 by Infineon and IAUC60N04S6N031HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 β ActiveInfineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6L012ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | IAUC (Integrated Automotive Half-Bridge) |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC | 120 A | β |
| Pulsed Drain Current (IDM) | 480 A | β |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΞ© (typ) | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | β |
| Power Dissipation (PD) at TC | 115 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | -55 Β°C to +175 Β°C (Tj) |
| Package | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TDSON-8-56 (5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Delivery Form | Tape & Reel | β |
| Process Technology | β | OptiMOS 6 40V |
| Configuration | β | Half-Bridge (2 N-Channel MOSFETs) |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, Tj) | β | 60 A |
| Power Dissipation (P_D, Tc=25C) | β | 75 W |
| R_DS(on) at VGS=10V | β | 3.1 mΞ© |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Pin Count | β | 8 |