IAUC120N04S6L012ATMA1 vs IAUC60N04S6N044ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6L012ATMA1 by Infineon and IAUC60N04S6N044ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6L012ATMA1
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 β ActiveInfineon
IAUC60N04S6N044ATMA1
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6L012ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.98 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 6 40V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC | 120 A | β |
| Pulsed Drain Current (IDM) | 480 A | β |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΞ© (typ) | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | β |
| Power Dissipation (PD) at TC | 115 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | β |
| Package | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified (IAUC prefix) |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Delivery Form | Tape & Reel | β |
| Technology | β | OptiMOS-6 N-channel trench MOSFET |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25Β°C | β | 60 A |
| Continuous Drain Current (I_D) at Tc=100Β°C | β | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | β | 4.4 mΞ© |
| On-Resistance R_DS(on) max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25Β°C | β | 42 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen-free status] |