IAUC120N04S6N009ATMA1 vs IAUC120N04S6L009ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6N009ATMA1 by Infineon and IAUC120N04S6L009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6N009ATMA1
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΞ© OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 β ActiveInfineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΞ© 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6N009ATMA1 | IAUC120N04S6L009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.60 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D, Tc) | 120 A | β |
| Pulsed Drain Current | [DATA_NEEDED: pulsed I_D value] | β |
| R_DS(on) max @ V_GS=10V | 0.9 mΞ© | β |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: V_GS(th) typical value] | β |
| Total Gate Charge Q_g typ | [DATA_NEEDED: Q_g typical] | β |
| Power Dissipation (Tc) | 150 W | β |
| Thermal Resistance R_thJC max | 1.0 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-34 (5x6 mm leadless, SS08) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | β |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| RoHS | Compliant | β |
| Lead-Free / Halogen-Free | Yes (per Infineon product page) | β |
| Product Family | β | OptiMOS-6 40V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 150 A (per datasheet header) |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100Β°C) | β | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>DM</sub>) | β | [DATA_NEEDED: pulsed I_DM] |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | β | 0.9 mΞ© |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | β | [DATA_NEEDED: VGS(th) typ/range] |
| Gate Charge Q<sub>g</sub> | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25Β°C) | β | 150 W |
| Pin Count | β | 8 |
| AEC-Q101 Automotive Qualification | β | Yes |
| RoHS Status | β | Compliant |
| Avalanche Energy E<sub>AS</sub> | β | [DATA_NEEDED: single-pulse avalanche energy] |