IAUC120N04S6N009ATMA1 vs IAUC120N06S5N011ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6N009ATMA1 by Infineon and IAUC120N06S5N011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6N009ATMA1
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΞ© OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 β ActiveInfineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΞ© OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6N009ATMA1 | IAUC120N06S5N011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.60 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | β |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D, Tc) | 120 A | β |
| Pulsed Drain Current | [DATA_NEEDED: pulsed I_D value] | β |
| R_DS(on) max @ V_GS=10V | 0.9 mΞ© | β |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: V_GS(th) typical value] | β |
| Total Gate Charge Q_g typ | [DATA_NEEDED: Q_g typical] | β |
| Power Dissipation (Tc) | 150 W | β |
| Thermal Resistance R_thJC max | 1.0 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-53 (SSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS | Compliant | β |
| Lead-Free / Halogen-Free | Yes (per Infineon product page) | β |
| Product Family | β | OptiMOS-5 |
| Drain-Source Voltage (Vdss) | β | 60 V |
| Continuous Drain Current (Id) | β | 120 A (Tc=25Β°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | β | 310 A (Tj) |
| On-Resistance Rds(on) max | β | 1.1 mΞ© at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | β | Β±20 V |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total value] |
| Power Dissipation (Pd) | β | 188 W (Tc=25Β°C) |
| Operating Temperature Range | β | -55Β°C to +175Β°C (Tj) |
| RoHS Compliance | β | Compliant |