IAUC120N04S6N009ATMA1 vs IAUCN04S7L042GATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6N009ATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6N009ATMA1
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΞ© OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 β ActiveInfineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6N009ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.60 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | β |
| Polarity / Channel Type | N-Channel | N-Channel enhancement mode |
| Drain-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D, Tc) | 120 A | β |
| Pulsed Drain Current | [DATA_NEEDED: pulsed I_D value] | β |
| R_DS(on) max @ V_GS=10V | 0.9 mΞ© | β |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: V_GS(th) typical value] | β |
| Total Gate Charge Q_g typ | [DATA_NEEDED: Q_g typical] | β |
| Power Dissipation (Tc) | 150 W | β |
| Thermal Resistance R_thJC max | 1.0 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Automotive Qualification | AEC-Q101 | β |
| MSL Level | 1 | 1 |
| RoHS | Compliant | β |
| Lead-Free / Halogen-Free | Yes (per Infineon product page) | β |
| Product Family | β | OptiMOS 7 40V |
| Technology | β | Trench N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tj) | β | 77 A |
| Maximum Power Dissipation (PD, Tc) | β | 50 W |
| Operating Temperature Range | β | -55C to +175C (Tj) |
| Automotive Qualified | β | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| RoHS Status | β | Compliant |
| Packing | β | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | β | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg @ VGS=10V] |