IAUC120N04S6N010ATMA1 vs IAUC120N06S5N011ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6N010ATMA1 by Infineon and IAUC120N06S5N011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveInfineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΞ© OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6N010ATMA1 | IAUC120N06S5N011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $1.62 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V(BR)DSS) | 40 V | β |
| Continuous Drain Current (Id, Tc) | 150 A | β |
| Power Dissipation (Pd, Tc) | 150 W | β |
| RDS(on) at VGS=10V (typ) | 1.0 mΞ© | β |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΞ© | β |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 Β΅A) | β |
| Technology | OptiMOS 6 | β |
| Package | PG-TDSON-8-34 (5x6 mm leadless) | PG-TDSON-8-53 (SSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) | -55Β°C to +175Β°C (Tj) |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | β |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | β |
| Polarity | Single N-channel | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 60 V |
| Continuous Drain Current (Id) | β | 120 A (Tc=25Β°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | β | 310 A (Tj) |
| On-Resistance Rds(on) max | β | 1.1 mΞ© at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | β | Β±20 V |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total value] |
| Power Dissipation (Pd) | β | 188 W (Tc=25Β°C) |
| RoHS Compliance | β | Compliant |