IAUC120N04S6N010ATMA1 vs IAUC41N06S5N102ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6N010ATMA1 by Infineon and IAUC41N06S5N102ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveInfineon
IAUC41N06S5N102ATMA1
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΞ© OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6N010ATMA1 | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.58 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V(BR)DSS) | 40 V | β |
| Continuous Drain Current (Id, Tc) | 150 A | β |
| Power Dissipation (Pd, Tc) | 150 W | β |
| RDS(on) at VGS=10V (typ) | 1.0 mΞ© | β |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΞ© | β |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 Β΅A) | β |
| Technology | OptiMOS 6 | β |
| Package | PG-TDSON-8-34 (5x6 mm leadless) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per Infineon automotive MOSFET family) |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) | -55C to +175C (junction) |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | β |
| RoHS Status | Compliant | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | β |
| Polarity | Single N-channel | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 5 Power-Transistor |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc) | β | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | β | 42 W |
| On-Resistance (RDS(on)) | β | 10.2 mΞ© at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | β | 3.4 V (typical) |
| Total Gate Charge (QG) | β | 12.5 nC |
| Channel Polarity | β | N-Channel (single) |