IAUC120N04S6N010ATMA1 vs IAUC50N08S5N102ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6N010ATMA1 by Infineon and IAUC50N08S5N102ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveInfineon
IAUC50N08S5N102ATMA1
IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon
IAUC50N08S5N102ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6N010ATMA1 | IAUC50N08S5N102ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.51 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V(BR)DSS) | 40 V | β |
| Continuous Drain Current (Id, Tc) | 150 A | β |
| Power Dissipation (Pd, Tc) | 150 W | β |
| RDS(on) at VGS=10V (typ) | 1.0 mΞ© | β |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΞ© | β |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 Β΅A) | β |
| Technology | OptiMOS 6 | β |
| Package | PG-TDSON-8-34 (5x6 mm leadless) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) | -55Β°C to +175Β°C |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | β |
| Polarity | Single N-channel | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 50 A |
| On-Resistance (RDS(on)) | β | 10.2 mΞ© @ 25 A, 10 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Gate-Source Voltage (VGS) Max | β | Β±20 V |
| Total Gate Charge (Qg) | β | 21 nC @ 10 V |
| Input Capacitance (Ciss) | β | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25Β°C | β | 60 W |
| Package / Case | β | PG-TDSON-8-33 |
| Qualification | β | AEC-Q101 |