IAUC120N06S5L011ATMA1 vs IAUC100N04S6L025ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L011ATMA1 by Infineon and IAUC100N04S6L025ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L011ATMA1
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 β ActiveInfineon
IAUC100N04S6L025ATMA1
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5L011ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $0.62 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 60 V (S5 generation) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 60 V | β |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | β |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing | β |
| R_DS(on) max | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] | β |
| Power Dissipation (P_D) | 188 W at T_C = 25 Β°C | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Package | PG-TDSON-8-53 (TDSON-8 FL, 5 mm Γ 6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (EAS) | β |
| Technology | β | OptiMOS 6 40V trench MOSFET |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) max at VGS=10V | β | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | β | 62 W |
| Lead-Free | β | Yes |