IAUC120N06S5L032ATMA1 vs IAUC120N04S6L009ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L032ATMA1 by Infineon and IAUC120N04S6L009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 β ActiveInfineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΞ© 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5L032ATMA1 | IAUC120N04S6L009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (60 V) | OptiMOS-6 40V |
| Transistor Type | N-Channel, Enhancement Mode | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | 60 V | β |
| Continuous Drain Current (I_D, T_j) | 120 A | β |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm | β |
| Power Dissipation (P_D, T_C = 25 C) | 94 W | β |
| Package | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-34 (5x6 mm leadless, SS08) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (T_j) | β |
| Technology | OptiMOS 5 Trench | β |
| AEC-Q101 Qualified | Yes | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical and min/max] | β |
| Total Gate Charge Q_G | [DATA_NEEDED: Q_G total at V_GS=10V] | β |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 150 A (per datasheet header) |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100Β°C) | β | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>DM</sub>) | β | [DATA_NEEDED: pulsed I_DM] |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | β | 0.9 mΞ© |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | β | [DATA_NEEDED: VGS(th) typ/range] |
| Gate Charge Q<sub>g</sub> | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25Β°C) | β | 150 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Pin Count | β | 8 |
| AEC-Q101 Automotive Qualification | β | Yes |
| Avalanche Energy E<sub>AS</sub> | β | [DATA_NEEDED: single-pulse avalanche energy] |