IAUC120N06S5L032ATMA1 vs IPD031N06L3GATMA1 Comparison

Detailed side-by-side comparison of IAUC120N06S5L032ATMA1 by Infineon and IPD031N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC120N06S5L032ATMA1 IPD031N06L3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.48
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 5 (60 V) β€”
Transistor Type N-Channel, Enhancement Mode β€”
Drain-to-Source Voltage (V_DS) 60 V β€”
Continuous Drain Current (I_D, T_j) 120 A β€”
R_DS(on) Max (V_GS = 10 V) 3.2 mOhm β€”
Power Dissipation (P_D, T_C = 25 C) 94 W β€”
Package PG-TDSON-8-34 (5x6 mm) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C (T_j) -55Β°C to +175Β°C
Technology OptiMOS 5 Trench MOSFET (Metal Oxide)
AEC-Q101 Qualified Yes β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] 1 (Unlimited)
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) typical and min/max] β€”
Total Gate Charge Q_G [DATA_NEEDED: Q_G total at V_GS=10V] β€”
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at TC=25Β°C β€” 100 A
Pulsed Drain Current (IDM) β€” 400 A
Maximum Power Dissipation (PD) at TC=25Β°C β€” 167 W
RDS(on) Max at VGS=10V β€” 3.1 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 1.0 V to 2.2 V
Gate Drive Voltage (Max RDS(on)) β€” 4.5 V, 10 V
Total Gate Charge (Qg) Typ β€” [DATA_NEEDED: Qg typical value]
Series β€” OptiMOS 3

Datasheets & Resources

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