IAUC28N08S5L230ATMA1 vs IAUCN10S7N021ATMA1 Comparison
Detailed side-by-side comparison of IAUC28N08S5L230ATMA1 by Infineon and IAUCN10S7N021ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC28N08S5L230ATMA1
IAUC28N08S5L230ATMA1 - 80V 28A 23mΞ© OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 β ActiveInfineon
IAUCN10S7N021ATMA1
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC28N08S5L230ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $2.05 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS-5 | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | 28 A | β |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 23 mΞ© (typ) | β |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | 2.5 V | β |
| Gate Charge (Q<sub>g</sub>, typ) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 38 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-33 (5x6 mm SSO8) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 Power MOSFET | OptiMOSβ’ 7 (trench MOSFET) |
| Automotive Qualified | Yes (AEC-Q101) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tc | β | 175 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| RDS(on) max @ VGS=10 V | β | 2.1 mΞ© |
| Gate-Source Threshold (VGS(th)) typ | β | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | β | 105 nC |
| Input Capacitance (Ciss) | β | 2.98 nF |
| Output Capacitance (Coss) | β | 32 pF |
| Reverse Transfer Capacitance (Crss) | β | 7.153 nF |
| Power Dissipation (Pd) @ Tc | β | 217 W |
| Qualification | β | AEC-Q101 (Automotive) |