IAUC28N08S5L230ATMA1 vs IAUZ20N08S5L300ATMA1 Comparison
Detailed side-by-side comparison of IAUC28N08S5L230ATMA1 by Infineon and IAUZ20N08S5L300ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΞ© OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 β ActiveInfineon
IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ20N08S5L300ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC28N08S5L230ATMA1 | IAUZ20N08S5L300ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | 28 A | β |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 23 mΞ© (typ) | β |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | 2.5 V | β |
| Gate Charge (Q<sub>g</sub>, typ) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 38 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55Β°C to +175Β°C |
| Package | PG-TDSON-8-33 (5x6 mm SSO8) | PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 Power MOSFET | Trench MOSFET (OptiMOS-5) |
| Automotive Qualified | Yes (AEC-Q101) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Product Family | β | OptiMOS-5 |
| Polarity | β | N-Channel |
| Drain-Source Voltage (Vds) | β | 80 V |
| Continuous Drain Current (Id) | β | 20 A (Tc) |
| Power Dissipation (Pd) | β | 30 W (Tc) |
| On-State Resistance (Rds(on)) | β | 30 mΞ© @ 10 A, 10 V |
| Gate Threshold Voltage (Vgs(th)) | β | Β±20 V (max Vgs rating) |
| Input Capacitance (Ciss) | β | 599 pF @ 40 V |
| Total Gate Charge (Qg) | β | 10.5 nC @ 10 V |
| Qualification | β | AEC-Q101 (automotive) |