IAUC41N06S5L100ATMA1 vs IAUC28N08S5L230ATMA1 Comparison
Detailed side-by-side comparison of IAUC41N06S5L100ATMA1 by Infineon and IAUC28N08S5L230ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC41N06S5L100ATMA1
IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
IAUC41N06S5L100ATMA1 β ActiveInfineon
IAUC28N08S5L230ATMA1
IAUC28N08S5L230ATMA1 - 80V 28A 23mΞ© OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC41N06S5L100ATMA1 | IAUC28N08S5L230ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.43 | $0.71 |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS-5 Power MOSFET |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, Tj) | 41 A | β |
| Power Dissipation (PD, TC) | 42 W | β |
| On-State Resistance (RDS(on)) max | 10 mOhm at VGS=10 V | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | PG-TDSON-8-33 (TDSON-8, 5x6 mm) | PG-TDSON-8-33 (5x6 mm SSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Automotive Qualified | Yes (AEC-Q101 automotive grade) | Yes (AEC-Q101) |
| RoHS Status | Compliant | Compliant |
| Interconnect | Copper clip (low-inductance) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS-5 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | β | 28 A |
| Pulsed Drain Current (I<sub>DM</sub>) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | β | 23 mΞ© (typ) |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | β | 2.5 V |
| Gate Charge (Q<sub>g</sub>, typ) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | β | 38 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |