IAUC41N06S5L100ATMA1 vs IAUCN10S7N021ATMA1 Comparison
Detailed side-by-side comparison of IAUC41N06S5L100ATMA1 by Infineon and IAUCN10S7N021ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC41N06S5L100ATMA1
IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
IAUC41N06S5L100ATMA1 β ActiveInfineon
IAUCN10S7N021ATMA1
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC41N06S5L100ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.43 | $2.05 |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOSβ’ 7 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID, Tj) | 41 A | β |
| Power Dissipation (PD, TC) | 42 W | β |
| On-State Resistance (RDS(on)) max | 10 mOhm at VGS=10 V | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | PG-TDSON-8-33 (TDSON-8, 5x6 mm) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Automotive Qualified | Yes (AEC-Q101 automotive grade) | β |
| RoHS Status | Compliant | Compliant |
| Interconnect | Copper clip (low-inductance) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc | β | 175 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| RDS(on) max @ VGS=10 V | β | 2.1 mΞ© |
| Gate-Source Threshold (VGS(th)) typ | β | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | β | 105 nC |
| Input Capacitance (Ciss) | β | 2.98 nF |
| Output Capacitance (Coss) | β | 32 pF |
| Reverse Transfer Capacitance (Crss) | β | 7.153 nF |
| Power Dissipation (Pd) @ Tc | β | 217 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Qualification | β | AEC-Q101 (Automotive) |