IAUC50N08S5L096ATMA1 vs BSC265N10LSFGATMA1 Comparison

Detailed side-by-side comparison of IAUC50N08S5L096ATMA1 by Infineon and BSC265N10LSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC50N08S5L096ATMA1

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC50N08S5L096ATMA1 BSC265N10LSFGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $0.72
Manufacturer Infineon Technologies β€”
Product Series OptiMOS 5 β€”
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (ID) 50 A (Tc) β€”
Pulsed Drain Current (IDM) 200 A β€”
On-Resistance (RDS(on)) 9.6 mΞ© max @ VGS=10V, ID=25A β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
Power Dissipation (PD) 60 W (Tc) β€”
Operating Temperature Range -55Β°C to +175Β°C -55 C to +150 C (junction)
Package PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-1 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
MSL Level [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Continuous Drain Current (ID, Tc) β€” 40 A
Continuous Drain Current (ID, Ta) β€” 6.5 A
Power Dissipation (PD, Tc) β€” 78 W
Technology β€” OptiMOS 2 (TrenchFET)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min]
On-State Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss typical]
Avalanche Rated β€” Yes
Series β€” OptiMOS 2

Datasheets & Resources

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