IAUC50N08S5L096ATMA1 vs IAUC100N04S6N028ATMA1 Comparison

Detailed side-by-side comparison of IAUC50N08S5L096ATMA1 by Infineon and IAUC100N04S6N028ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC50N08S5L096ATMA1

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 βœ“ Active
Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC50N08S5L096ATMA1 IAUC100N04S6N028ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $0.42
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 β€”
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) 50 A (Tc) β€”
Pulsed Drain Current (IDM) 200 A β€”
On-Resistance (RDS(on)) 9.6 mΞ© max @ VGS=10V, ID=25A β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
Power Dissipation (PD) 60 W (Tc) β€”
Operating Temperature Range -55Β°C to +175Β°C -55 Β°C to +175 Β°C
Package PG-TDSON-8-33 (5x6 mm) PG-TDSON-8 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level [DATA_NEEDED: MSL level] β€”
Series β€” OptiMOS 6 40V
Technology β€” MOSFET (Metal Oxide)
Drain-Source Voltage (V_DS) β€” 40 V
Continuous Drain Current (I_D) at T_C=25Β°C β€” 100 A
Pulsed Drain Current (I_DM) β€” 400 A
R_DS(on) max @ V_GS=10V β€” 2.8 mΞ© (typical)
Gate Threshold Voltage (V_GS(th)) β€” 1.5 V to 2.5 V
Total Gate Charge (Q_g) β€” [DATA_NEEDED: Q_g in nC]
Power Dissipation (P_D) at T_C=25Β°C β€” 62 W
Automotive Qualified β€” Yes

Datasheets & Resources

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