IAUC50N08S5L096ATMA1 vs IAUCN08S7N034ATMA1 Comparison
Detailed side-by-side comparison of IAUC50N08S5L096ATMA1 by Infineon and IAUCN08S7N034ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC50N08S5L096ATMA1
IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon
IAUC50N08S5L096ATMA1 β ActiveInfineon
IAUCN08S7N034ATMA1
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΞ© Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC50N08S5L096ATMA1 | IAUCN08S7N034ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $1.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) | 50 A (Tc) | β |
| Pulsed Drain Current (IDM) | 200 A | β |
| On-Resistance (RDS(on)) | 9.6 mΞ© max @ VGS=10V, ID=25A | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Power Dissipation (PD) | 60 W (Tc) | β |
| Operating Temperature Range | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-34 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL level] | MSL 1 (unlimited floor life) |
| Series | β | OptiMOSβ’ 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 120 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | β | 3.4 mΞ© |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | β | 3.2 V (typ) |
| Total Gate Charge (Q<sub>G</sub>) | β | 45.8 nC @ V<sub>GS</sub>=10 V |
| Input Capacitance (C<sub>iss</sub>) | β | 1.27 nF |
| Output Capacitance (C<sub>oss</sub>) | β | 3.115 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | β | 23 pF |
| Power Dissipation (P<sub>D</sub>) | β | 118 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |