IAUC50N08S5L096ATMA1 vs IAUZ30N08S5N186ATMA1 Comparison

Detailed side-by-side comparison of IAUC50N08S5L096ATMA1 by Infineon and IAUZ30N08S5N186ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC50N08S5L096ATMA1

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 βœ“ Active
Infineon
IAUZ30N08S5N186ATMA1

IAUZ30N08S5N186ATMA1 - 80V 18.6mΞ© OptiMOS 5 N-MOSFET | Infineon

IAUZ30N08S5N186ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC50N08S5L096ATMA1 IAUZ30N08S5N186ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $0.48
Manufacturer Infineon Technologies β€”
Product Series OptiMOS 5 β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (ID) 50 A (Tc) β€”
Pulsed Drain Current (IDM) 200 A β€”
On-Resistance (RDS(on)) 9.6 mΞ© max @ VGS=10V, ID=25A β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
Power Dissipation (PD) 60 W (Tc) β€”
Operating Temperature Range -55Β°C to +175Β°C -55 Β°C to +175 Β°C (automotive)
Package PG-TDSON-8-33 (5x6 mm) PG-TSDSON-8-32 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Technology β€” OptiMOS 5 N-Channel Power MOSFET (trench)
Continuous Drain Current (ID, Tj) β€” 30 A
Power Dissipation (PD, Tc) β€” 41 W
On-State Resistance (RDS(on)) β€” 18.6 mΞ© (typical, VGS = 10 V)
Gate-Source Voltage (VGS) Max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg at VGS=10V]
Lead-Free / Halogen-Free β€” Yes / [DATA_NEEDED: halogen-free status]

Datasheets & Resources

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