IAUC50N08S5L096ATMA1 vs ISC016N08NM8ATMA1 Comparison
Detailed side-by-side comparison of IAUC50N08S5L096ATMA1 by Infineon and ISC016N08NM8ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC50N08S5L096ATMA1
IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon
IAUC50N08S5L096ATMA1 β Active
Specification Comparison
| Parameter | IAUC50N08S5L096ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | OptiMOS 8 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) | 50 A (Tc) | β |
| Pulsed Drain Current (IDM) | 200 A | β |
| On-Resistance (RDS(on)) | 9.6 mΞ© max @ VGS=10V, ID=25A | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Power Dissipation (PD) | 60 W (Tc) | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55 C to +150 C (junction) |
| Package | PG-TDSON-8-33 (5x6 mm) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS max) | β | 80 V |
| Gate-Source Voltage (VGS max) | β | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | β | 268 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | β | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: total gate charge] |
| Technology | β | Trench-gate OptiMOS 8 (silicon) |
| Lead-Free / Halogen-Free | β | Lead-free (per Infineon product page) |