IAUC60N04S6L030HATMA1 vs BSZ100N03MSGATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6L030HATMA1 by Infineon and BSZ100N03MSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveInfineon
BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
BSZ100N03MSGATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6L030HATMA1 | BSZ100N03MSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | β |
| Configuration | Half-Bridge (2 N-Channel) | Single with built-in body diode |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TJ | 60 A | β |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | β |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | β |
| Output Capacitance (Coss) | 2.128 nF | β |
| Reverse Transfer Capacitance (Crss) | 596 pF | β |
| Gate Threshold Voltage (VGS(th)) | 2 V | β |
| Maximum Power Dissipation (PD) at TC | 75 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TSDSON-8 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Part Family | β | OptiMOS 25V / 30V |
| Transistor Type | β | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA | β | 10 A |
| Continuous Drain Current (ID) at TC | β | 40 A |
| Power Dissipation (PD) at TA | β | 2.1 W |
| Power Dissipation (PD) at TC | β | 30 W |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: Β±20 V typical per datasheet; verify in datasheet] |
| Technology | β | Trench MOSFET (OptiMOS) |
| Terminal Finish | β | Tin (Pb-free) |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Qualification | β | JEDEC - target application qualified |
| Avalanche Tested | β | 100% (per JEDEC) |
| RoHS Compliance | β | Compliant (Pb-free plating) |
| Halogen-Free | β | Yes (per IEC 61249-2-21) |
| RDS(on) at VGS=10V (typical) | β | [DATA_NEEDED: see datasheet Diagram 1] |
| Gate Charge Qg (typical) | β | [DATA_NEEDED: see datasheet] |