IAUC60N04S6L030HATMA1 vs IAUC41N06S5N102ATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6L030HATMA1 by Infineon and IAUC41N06S5N102ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveInfineon
IAUC41N06S5N102ATMA1
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΞ© OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6L030HATMA1 | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | β |
| Configuration | Half-Bridge (2 N-Channel) | β |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TJ | 60 A | β |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | β |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | β |
| Output Capacitance (Coss) | 2.128 nF | β |
| Reverse Transfer Capacitance (Crss) | 596 pF | β |
| Gate Threshold Voltage (VGS(th)) | 2 V | β |
| Maximum Power Dissipation (PD) at TC | 75 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | AEC-Q101 (per Infineon automotive MOSFET family) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Part Family | β | OptiMOS 5 Power-Transistor |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | β | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | β | 42 W |
| On-Resistance (RDS(on)) | β | 10.2 mΞ© at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | β | 3.4 V (typical) |
| Total Gate Charge (QG) | β | 12.5 nC |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Channel Polarity | β | N-Channel (single) |