IAUC60N04S6N031HATMA1 vs BSZ024N04LS6ATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6N031HATMA1 by Infineon and BSZ024N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6N031HATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.46 |
| Manufacturer | Infineon Technologies | β |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | β |
| Process Technology | OptiMOS 6 40V | β |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | β |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D, Tj) | 60 A | β |
| Power Dissipation (P_D, Tc=25C) | 75 W | β |
| R_DS(on) at VGS=10V | 3.1 mΞ© | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | β |
| Package | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount, top-side drain pad |
| Pin Count | 8 | β |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS 6 (shielded-gate trench) |
| Continuous Drain Current (I_D, Ta) | β | 24 A |
| Continuous Drain Current (I_D, Tc) | β | 40 A |
| Pulsed Drain Current (I_DM) | β | 130 A |
| R_DS(on) Max @ V_GS=10V | β | 2.4 mΞ© |
| R_DS(on) Max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at 4.5V] |
| Gate Threshold Voltage (V_GS(th)) | β | 2.3 V (typical) |
| Total Gate Charge (Q_g) @ V_GS=10V | β | 25 nC |
| Input Capacitance (C_iss) | β | 1.8 nF |
| Output Capacitance (C_oss) | β | 19 pF |
| Power Dissipation (P_D, Ta) | β | 2.5 W |
| Power Dissipation (P_D, Tc) | β | 75 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |