IAUC60N04S6N031HATMA1 vs IAUC28N08S5L230ATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6N031HATMA1 by Infineon and IAUC28N08S5L230ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 β ActiveInfineon
IAUC28N08S5L230ATMA1
IAUC28N08S5L230ATMA1 - 80V 28A 23mΞ© OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6N031HATMA1 | IAUC28N08S5L230ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | β |
| Process Technology | OptiMOS 6 40V | β |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Tj) | 60 A | β |
| Power Dissipation (P_D, Tc=25C) | 75 W | β |
| R_DS(on) at VGS=10V | 3.1 mΞ© | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | β |
| Package | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TDSON-8-33 (5x6 mm SSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Series | β | OptiMOS-5 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | β | 28 A |
| Pulsed Drain Current (I<sub>DM</sub>) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | β | 23 mΞ© (typ) |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | β | 2.5 V |
| Gate Charge (Q<sub>g</sub>, typ) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | β | 38 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Technology | β | OptiMOS-5 Power MOSFET |
| Automotive Qualified | β | Yes (AEC-Q101) |