IAUC60N04S6N044ATMA1 vs BSC123N08NS3GATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6N044ATMA1 by Infineon and BSC123N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6N044ATMA1
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveInfineon
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6N044ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.71 |
| Technology | OptiMOS-6 N-channel trench MOSFET | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | β |
| Continuous Drain Current (I_D) at Tc=25Β°C | 60 A | β |
| Continuous Drain Current (I_D) at Tc=100Β°C | [DATA_NEEDED: pulsed/current derated value] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΞ© | β |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | β |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | β |
| Power Dissipation (P_D) at Tc=25Β°C | 42 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55C to +150C |
| Package | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | β |
| RoHS Status | Compliant | Compliant with exemption |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 3 |
| Channel Type | β | N-Channel |
| Configuration | β | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | β | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | β | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | β | 11 A |
| Maximum Pulsed Drain Current | β | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | β | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | β | 66 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Automotive Qualified | β | Yes (AEC-Q101) |