IAUC60N04S6N044ATMA1 vs IAUC60N04S6N031HATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6N044ATMA1 by Infineon and IAUC60N04S6N031HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6N044ATMA1
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveInfineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6N044ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.95 |
| Technology | OptiMOS-6 N-channel trench MOSFET | β |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | β |
| Continuous Drain Current (I_D) at Tc=25Β°C | 60 A | β |
| Continuous Drain Current (I_D) at Tc=100Β°C | [DATA_NEEDED: pulsed/current derated value] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΞ© | β |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | β |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | β |
| Power Dissipation (P_D) at Tc=25Β°C | 42 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8-56 (5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | IAUC (Integrated Automotive Half-Bridge) |
| Process Technology | β | OptiMOS 6 40V |
| Configuration | β | Half-Bridge (2 N-Channel MOSFETs) |
| Continuous Drain Current (I_D, Tj) | β | 60 A |
| Power Dissipation (P_D, Tc=25C) | β | 75 W |
| R_DS(on) at VGS=10V | β | 3.1 mΞ© |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (Tj) |
| Pin Count | β | 8 |