IAUC60N06S5L073ATMA1 vs BSC034N06NSATMA1 Comparison
Detailed side-by-side comparison of IAUC60N06S5L073ATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N06S5L073ATMA1
IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
IAUC60N06S5L073ATMA1 β ActiveInfineon
BSC034N06NSATMA1
BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
BSC034N06NSATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N06S5L073ATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.65 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tj | 60 A | β |
| On-Resistance RDS(on) max | 7.3 mΞ© | β |
| Total Gate Charge (QG) | 17.4 nC | β |
| Power Dissipation (PD) at Tc | 52 W | β |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | -55C to +150C |
| Technology | Trench (OptiMOS 5) | OptiMOS 5 |
| Number of Pins | 8 | β |
| Configuration | Single N-Channel | β |
| Qualification | AEC-Q101 automotive grade | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Thermal Resistance RΞΈJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 60 V |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | β | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 74 W |