IAUC60N06S5L073ATMA1 vs BSC0911NDATMA1 Comparison
Detailed side-by-side comparison of IAUC60N06S5L073ATMA1 by Infineon and BSC0911NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N06S5L073ATMA1
IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
IAUC60N06S5L073ATMA1 β ActiveInfineon
BSC0911NDATMA1
BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon
BSC0911NDATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N06S5L073ATMA1 | BSC0911NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tj | 60 A | β |
| On-Resistance RDS(on) max | 7.3 mΞ© | β |
| Total Gate Charge (QG) | 17.4 nC | β |
| Power Dissipation (PD) at Tc | 52 W | β |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TISON-8 (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | β |
| Technology | Trench (OptiMOS 5) | OptiMOS trench MOSFET |
| Number of Pins | 8 | β |
| Configuration | Single N-Channel | Dual N-Channel (2 N-CH) |
| Qualification | AEC-Q101 automotive grade | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Thermal Resistance RΞΈJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | β |
| Product Family | β | OptiMOS 25V |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) | β | 18 A |
| Pulsed Drain Current (IDM) | β | 30 A |
| Power Dissipation (PD) | β | 1 W |
| Operating Temperature | β | -55C to +150C (junction) |
| Channel Type | β | N-Channel Enhancement Mode |
| Gate Threshold (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |