IAUC60N06S5L073ATMA1 vs IPC90N04S5L3R3ATMA1 Comparison
Detailed side-by-side comparison of IAUC60N06S5L073ATMA1 by Infineon and IPC90N04S5L3R3ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N06S5L073ATMA1
IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
IAUC60N06S5L073ATMA1 β ActiveInfineon
IPC90N04S5L3R3ATMA1
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N06S5L073ATMA1 | IPC90N04S5L3R3ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tj | 60 A | β |
| On-Resistance RDS(on) max | 7.3 mΞ© | β |
| Total Gate Charge (QG) | 17.4 nC | β |
| Power Dissipation (PD) at Tc | 52 W | β |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-34 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | β |
| Technology | Trench (OptiMOS 5) | β |
| Number of Pins | 8 | β |
| Configuration | Single N-Channel | β |
| Qualification | AEC-Q101 automotive grade | AEC-Q101 automotive qualified |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Thermal Resistance RΞΈJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | β |
| Product Family | β | OptiMOS 5 40V |
| FET Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 90 A |
| On-Resistance RDS(on) max at VGS=10V | β | 3.3 mΞ© |
| On-Resistance RDS(on) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage VGS(th) | β | 1.7 V to 2.7 V (logic level) |
| Total Power Dissipation (TC=25Β°C) | β | 62 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Storage Temperature Range | β | [DATA_NEEDED: storage temp range] |
| MSL Moisture Sensitivity | β | MSL1 (per JEDEC J-STD-020) |
| Peak Reflow Temperature | β | 260Β°C |
| Avalanche Tested | β | 100% (production-level) |
| RoHS Compliance | β | Compliant (Green Product) |